FILM FORMING METHOD, AND FILM FORMING APPARATUS

Japanese Patent JP2013219380

A

To provide a film forming method capable of embedding a Mn containing thin film, a CuMn containing alloy thin film, or the like even in a fine recessed section with high step coverage by forming these films by heat treatment such as CVD, and greatly reducing a device cost by performing continuous processing with the same processor.

On a surface of a workpiece W to be processed, a thin film is formed by heat treatment by using transition metal containing material gas containing transition metal and oxygen containing gas in a treatment container 14 which is made capable of vacuum pull. Thereby, for example, when forming a Mn containing thin film, a CuMn containing alloy thin film, or the like by heat treatment such as CVD, these films can be embedded even in a fine recessed section with high step coverage.

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MATSUMOTO KENJI
ITO HITOSHI
NEISHI KOJI
KOIKE JUNICHI

JP2013117561A

October 24, 2013

June 04, 2013

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TOKYO ELECTRON LTD
UNIV TOHOKU

H01L21/285; C23C16/52; H01L21/28; H01L21/3205; H01L21/768; H01L23/532

JP2001156024A	2001-06-08
JP2006503185A	2006-01-26
JP2007502551A	2007-02-08
JP2005277390A	2005-10-06
JP2007067107A	2007-03-15
JP2006299407A	2006-11-02

US20050218519A1	2005-10-06
US20070048931A1	2007-03-01
US20030129309A1	2003-07-10
WO2004036624A2	2004-04-29
WO2004114398A1	2004-12-29

Akihiro Asai

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