Title:
ＳｉＯＣＮ薄膜の形成
Document Type and Number:
Japanese Patent JP7135187
Kind Code:
B2
Abstract:
Methods for depositing silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOCN films having improved acid-based wet etch resistance.
Inventors:
Toshiya Suzuki
Pole Ville Jami Jay.
Pole Ville Jami Jay.
Application Number:
JP2021153262A
Publication Date:
September 12, 2022
Filing Date:
September 21, 2021
Export Citation:
Assignee:
ASP Holding B.V.
International Classes:
H01L21/318; C23C16/42
Domestic Patent References:
| JP2015088562A | ||||
| JP2006287194A | ||||
| JP2014096599A | ||||
| JP2013155173A | ||||
| JP2011504651A | ||||
| JP2003515674A | ||||
| JP2015510263A |
Foreign References:
| US20030015764 |
Attorney, Agent or Firm:
Takashi Onodera
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