To provide the formation of fine crystalline silicon film capable of speedily forming the excellent silicon film at low cost.

In this method, a fine crystalline silicon film is formed by a high frequency plasma CVD process using a material gas containing at least a silicon compound. Assuming the formation pressure to be P (torr), total flow rate of a material gas to be M (sccm), and the capacity in a formation room to be V (cm3), the stagnating time in the formation room of material gas to be τ (ms) and the stagnation time τ to be τ (ms)=78.9×V×P/M, τ may not exceed 40.