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Title:
FORMATION OF RESIST PATTERN
Document Type and Number:
Japanese Patent JPH04215661
Kind Code:
A
Abstract:

PURPOSE: To provide a radiation resist excellent in resolution and with high sensitivity by using a mixture of polymer composed of methacrylic acid ethoxyethyl and photocopolymerization starting agent which generates acid with light.

CONSTITUTION: A substrate is coated with a mixture of polymer composed of methacryl acid ethoxyethyl expressed by the general formula, and a photocopolymerization starting agent generating acid with light, and dried to provide a resist film having high transmissive property. After the resist film is irradiated selectively with radiation, it is heated, and developped with alkali developper, thus providing sub-micro patterns with high definition.


Inventors:
NOZAKI KOJI
NAKAMURA HIROKO
Application Number:
JP40213090A
Publication Date:
August 06, 1992
Filing Date:
December 14, 1990
Export Citation:
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Assignee:
FUJITSU LTD
International Classes:
G03F7/004; G03F7/027; G03F7/029; G03F7/031; G03F7/039; G03F7/20; G03F7/30; H01L21/02; H01L21/027; (IPC1-7): G03F7/004; G03F7/027; G03F7/029; G03F7/031; G03F7/039; G03F7/20; G03F7/30; H01L21/02; H01L21/027
Attorney, Agent or Firm:
Sadaichi Igita



 
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