Title:
FORMATION OF SILICON OXIDE FILM
Document Type and Number:
Japanese Patent JP3153162
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method of forming a silicon oxide film for the gate oxide film of a MOS device which has a low interface state density, and which is excellent in dielectric breakdown voltage characteristics and in long-term reliability (TDDB characteristics).
SOLUTION: After silicon substrates 12 are loaded into a reaction tube 6, the inside of the tube 6 is evacuated to a pressure lower than the atmospheric pressure. Through a gas supply tube 1, chlorine-containing organic gas and nitrogen-containing oxidizing gas are introduced. The gas mixture decomposes thermally in a preparatory room 2, which has been heated up to a high temperature by a preparatory room heater 3. By allowing the gas produced in the preparatory room 2 to pass through between a pair of electrode plate 4 for corona discharge, neutral-radical species containing gas in which atomic chlorine (Cl), atomic nitrogen (N), and atomic oxygen (O) are contained is produced. By introducing the neutral-radical species containing gas into the reaction tube 6, while supplying the gas to the surface of the substrate 12, a silicon oxide film is grown by thermal oxidation of the surface of the substrate 12.
Inventors:
Nobuhide Yamazaki
Hideyuki Ueda
Makoto Yamanishi
Hideyuki Ueda
Makoto Yamanishi
Application Number:
JP27567397A
Publication Date:
April 03, 2001
Filing Date:
October 08, 1997
Export Citation:
Assignee:
Matsushita Electronics Industrial Co., Ltd.
International Classes:
H01L29/78; H01L21/316; (IPC1-7): H01L21/316; H01L29/78
Domestic Patent References:
| JP6267938A | ||||
| JP456223A | ||||
| JP613372A | ||||
| JP5206453A | ||||
| JP212971A |
Attorney, Agent or Firm:
Akio Miyai