Title:
SEMICONDUCTOR DEVICE HAVING INDUCTOR
Document Type and Number:
Japanese Patent JP3153163
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a solid semiconductor device having such an inductor that can be insulated completely from a substrate.
SOLUTION: In a semiconductor device having an inductor, the inductor 25 is formed on a non-oxidized porous silicon area 15 formed in a silicon substrate 10. The porous silicon area 15 reduces the capacitive coupling and inductive coupling between the inductor 25 and the substrate 10. It is preferable to form the silicon area 15 by using such an electrolysis process that connects the silicon substrate 10 to be exposed to an electrolytic solution to an anode.
Inventors:
Ya Hongshi
Application Number:
JP28327797A
Publication Date:
April 03, 2001
Filing Date:
October 16, 1997
Export Citation:
Assignee:
Lucent Technologies, Inc.
International Classes:
H01L21/822; H01L21/3063; H01L23/522; H01L27/04; H01L27/08; (IPC1-7): H01L27/04; H01L21/3063
Attorney, Agent or Firm:
Hirofumi Mitsumata