Title:
FORMATION OF SILICON OXIDE FILM
Document Type and Number:
Japanese Patent JP3188782
Kind Code:
B2
Abstract:
PURPOSE: To provide the ceramic type silicon oxide film which is a thick film, is flat, is free from cracks and pinholes and is insoluble in an org. solvent by heating a base material on which a film mainly consisting of the silicon base resin expressed by specific general formula is formed.
CONSTITUTION: The film mainly consisting of the silicon base resin expressed by the general formula: (HR2SiO1/2)x(SiO4/2)1.0 is formed on the surface of the base material. In the formula, R is H, alkyl, aryl; X is 0.1≤X≤2.0. This base material is then heated to convert the film to the ceramic type silicon oxide film. The desired film which is flattened in ≥1μ level difference and does not contain silanol groups and alkoxy groups to be the cause for moisture absorption and carbon poison in the formed silicon oxide is formed at the temp. much lower than the m.p. of Al by this method. A tendency to high polymn. is admitted during preservation in a gelatinized or molten state at the time of synthesis if X in the formula is below the lower limit. On the other hand, the sufficient film hardness is not obtainable if X is above the upper limit.
Inventors:
Hajime Sasaki
Takashi Nakamura
peak victory
Takashi Nakamura
peak victory
Application Number:
JP4459093A
Publication Date:
July 16, 2001
Filing Date:
February 09, 1993
Export Citation:
Assignee:
DOW CORNING CORPORATION
International Classes:
C01B33/12; C08G77/02; C09D183/05; C23C14/10; C23C14/58; H01L21/312; C04B41/81; H01L21/314; H01L21/316; (IPC1-7): H01L21/316; C01B33/12; C08G77/02; C09D183/05; H01L21/312
Domestic Patent References:
| JP1108109A | ||||
| JP586330A |
Attorney, Agent or Firm:
Takashi Ishida (3 others)
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