Title:
FORMATION OF THIN FILM AND THIN FILM FORMING DEVICE
Document Type and Number:
Japanese Patent JPH09202960
Kind Code:
A
Abstract:
To prevent the infiltration of impurity oxygen into a boron nitride film, to improve the production capacity, to decrease the frequency of maintenance and to reduce the cost.
A boron thin film or a boron compd. thin film is formed on a substrate 9 in a vacuum vessel 1. A turbo molecular pump 2 and a cryopump 4 are provided to the vacuum vessel 1 respectively through valves 3 and 5, the vessel is evacuated by the turbo molecular pump 2 and cryopump 4 before the film is formed, the valve 5 on the cryopump 4 side is closed while the film is formed, and the vessel is evacuated only by the turbo molecular pump 2.
More Like This:
Inventors:
MIKAMI TAKASHI
NISHIYAMA SATORU
NISHIYAMA SATORU
Application Number:
JP3302796A
Publication Date:
August 05, 1997
Filing Date:
January 26, 1996
Export Citation:
Assignee:
NISSIN ELECTRIC CO LTD
International Classes:
C30B29/10; C23C14/06; C23C14/24; H01L21/203; H01L21/205; (IPC1-7): C23C14/06; C23C14/24; C30B29/10; H01L21/203; H01L21/205
Attorney, Agent or Firm:
Ryutaro Fujita
Previous Patent: MULTILAYER FILM AND PRODUCTION OF THE MULTILAYER FILM
Next Patent: PRODUCTION OF OPTICAL FILM FOR INFRARED
Next Patent: PRODUCTION OF OPTICAL FILM FOR INFRARED