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Patent Searching and Data


Title:
FORMING METHOD AND DEVICE FOR SRTIO3 THIN FILM
Document Type and Number:
Japanese Patent JPH06235064
Kind Code:
A
Abstract:

PURPOSE: To form the SrTiO3 thin film which has uniform film quality, is small in leak current and has excellent orientation and good quality.

CONSTITUTION: The surface of the substrate 3 is irradiated with short- wavelength light by a short-wavelength light source 15. A DC voltage source 13 is connected via an inductor 14 to a substrate holder 4. The flow rate of the gaseous O2 in a cylinder 6 is controlled by a flow rate controller 8 and about 10% O2 is ozonized by an ozonizing device 10; thereafter, the ozonized gas is introduced into a film forming chamber 1. Gaseous Ar is introduced under flow rate control into this film forming chamber 1. A high-frequency electric field is impressed to an SrTiO3 ceramic target 11 to generate plasma consisting mainly of O2, O3 and Ar on the target 11. The target constituting elements are driven out of the surface of the target 11 by this plasma and are deposited on the substrate 3.


Inventors:
SHIBUYA MUNEHIRO
KITAGAWA MASATOSHI
HAYASHI SHIGENORI
KAMATA TAKESHI
HIRAO TAKASHI
Application Number:
JP2004893A
Publication Date:
August 23, 1994
Filing Date:
February 08, 1993
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
B01J19/08; B01J19/12; C01G23/00; C04B35/46; C23C14/08; C23C14/44; (IPC1-7): C23C14/44; B01J19/08; B01J19/12; C01G23/00; C04B35/46; C23C14/08
Attorney, Agent or Firm:
Hiroyuki Ikeuchi (1 person outside)