PURPOSE: To make it possible to form a thin film of iron-copper alloy which has excellent magnetic characteristics with regard to saturation magnetic flux density, coercive force, etc. and is suitable for the sue as a magnetic thin film, by sputtering a target composed of iron and copper and making the supttered atoms of iron and copper adhere to a base.
CONSTITUTION: A target 3 composed of iron and copper is previously formed by fitting a circular plate 2 of capper in the center of a hollow circular plate 1 of iron so as to make an integral body. The targets 3 are mounted on each of target-holders 5, 5 of a sputtering equipment 4, and the sputtering process is progressed in the state wherein the two targets 3, 3 are faced with each other. After a vacuum chamber 6 is vacuumized at a first time and a sputter gas like argon, etc. is introduced and set at a specified low pressure, then an electric voltage is so impressed that the targets 3, 3 work as cathodes. Glow discharge generates between shielding rings 7, 7 and targets 3, 3, and iron and copper atoms cover the surface of a substrate 10 forming a magnetic thin film in a space 9 where a vertical magnetic field to the targets 3, 3 is formed by magnets 8, 8.
WO/2013/145050 | PLASMA PROCESSING APPARATUS AND SUBSTRATE PROCESSING SYSTEM |
JP5026715 | Method of forming a mixed film of metal and SiO2 |
JP6224677 | Sputtering system |
HOSHI YOICHI
HIRATA TOYOAKI
JPS4816120A | ||||
JPS57158380A | 1982-09-30 |
Next Patent: JPS6288315