Title:
GAAS SOLAR CELL
Document Type and Number:
Japanese Patent JPS61237477
Kind Code:
A
Abstract:
PURPOSE:To improve the photoelectric conversion efficiency of a GaAs solar cell by forming a first intermediate layer consisting of a P-type GaAs layer and a second intermediate layer composed of AlyGa1-yAs (0<=g<=0.4) in high carrier concentration onto an Si substrate. CONSTITUTION:A first intermediate layer 11 consisting of a P-type GaAs layer in film thickness of 40-1,000Angstrom , a second intermediate layer 12 composed of P-type AlyGa1-yAs (0<=y<=0.4) with a carrier concentration of 1X10<18>-5X10<19>cm<-3> shaped onto the first intermediate layer 11, a P-type GaAs layer 13, an N-type GaAs layer 14 and a window layer 15 consisting of N-type AlzGa1-zAs (where 0.6<=z<=0.95) are formed onto a P-type Si single crystal substrate 1 in succession, thus shaping a hetero-face structure GaAs solar cell composed of a P-N junction 2 of GaAs. According to said constitution, disloca tion density in the upper GaAs layers 13, 14 can be inhibited to 10<5>cm<-2> or less, and the recombination loss of optically induced carriers on an interface section with the first intermediate layer 11 or the Si substrate can be suppressed, thus improving photoelectric conversion efficiency.
Inventors:
YAMAGUCHI MASASHI
YAMAMOTO AKITOSHI
ITO YOSHIO
YAMAMOTO AKITOSHI
ITO YOSHIO
Application Number:
JP7838685A
Publication Date:
October 22, 1986
Filing Date:
April 15, 1985
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
H01L31/04; H01L31/0392; H01L31/06; H01L31/068; H01L31/0693; (IPC1-7): H01L31/04
Attorney, Agent or Firm:
Yoshikazu Tani