Title:
GALLIUM NITRIDE BASED GROUP III-V NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP3859505
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a GaN based III-V nitride semiconductor light emitting element, and its manufacturing method.
SOLUTION: A light emitting element is equipped with the first and second electrodes being installed in opposition with a high-resistance substrate 60 between or installed in the same direction on the upper side of the above substrate, and a substance layer for light emission or a substance layer 58 for tracing between the above first and second electrodes, and the second electrode 64 contacts with the above substance layer exposed through the etched section 62 of the above high-resistance substrate, or a heat conductive layer for covering the section where the above substance layer is exposed is made on the bottom of the above high-resistance substrate.
Inventors:
Guo
Lee Today
Zhao Ji
Cai Shu ki
Lee Today
Zhao Ji
Cai Shu ki
Application Number:
JP2001383523A
Publication Date:
December 20, 2006
Filing Date:
December 17, 2001
Export Citation:
Assignee:
Samsung Electric Co., Ltd.
International Classes:
H01L33/00; H01L33/10; H01L33/32; H01L33/38; H01L33/42; H01S5/042; H01S5/323; H01S5/02; H01S5/024; H01S5/343; (IPC1-7): H01L33/00; H01S5/323
Domestic Patent References:
| JP10308560A | ||||
| JP8032116A | ||||
| JP7202325A | ||||
| JP10084167A | ||||
| JP10173235A | ||||
| JP2165686A | ||||
| JP6152074A | ||||
| JP11045892A | ||||
| JP2000261088A | ||||
| JP10027769A | ||||
| JP11031841A | ||||
| JP7221347A |
Attorney, Agent or Firm:
Mikio Hatta