Title:
GAP SINGLE CRYSTAL FOR PHOTOREFRACTIVE ELEMENT AND PRODUCTION THEREOF
Document Type and Number:
Japanese Patent JPH0570296
Kind Code:
A
Abstract:
PURPOSE:To provide the GaP single crystal for a photorefractive element which can provide a sufficient PF effect even in a visible light region and has excellent responsiveness and the process for production of this single crystal. CONSTITUTION:This GaP single crystal for the photorefractive element for which the anticite defect levels of a Ga atom and a P atom are utilized, has <=1X10<16> atoms/cm<3> concn. of the Si impurity contained in this crystal and >=1X10<8>OMEGAcm specific resistance value at room temp. The single crystal is produced by an LEC method using a p-BN crucible. The crystal has the responsive sensitivity in 0.6 to 0.0 micron visible light region and has >=1X10<8>OMEGAcm specific resistance value at room temp. and, therefore, the formation of carriers by the thermal excitation in the crystal is suppressed and the sufficient PF effect by photoirradiation is generated.
Inventors:
OGAWA TAKASHI
KURODA KAZUO
KURODA KAZUO
Application Number:
JP22892991A
Publication Date:
March 23, 1993
Filing Date:
September 09, 1991
Export Citation:
Assignee:
SUMITOMO METAL MINING CO
International Classes:
C30B27/02; C30B29/44; G02F1/35; G03H1/02; (IPC1-7): C30B27/02; C30B29/44; G02F1/35; G03H1/02
Attorney, Agent or Firm:
Ueda Shozo