Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
GAS SENSOR AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2000258379
Kind Code:
A
Abstract:

To provide a gas sensor with sensitivity corresponding to gas to be detected by forming a ZnO thin film where the size of projections and recesses formed on its thin-film surface is adjusted when forming the ZnO thin film by the sol/gel method, and its manufacturing method.

In a method for manufacturing a gas sensor, acetic zinc dihydrate is dissolved to 2-methoxyethanol containing monoethanolamine and is subjected to hydrolysis by adjusting the amount of added distilled water, an obtained solution for coating is applied to the surface of a silicon substrate 11, then a ZnO thin film 12 that is obtained by heat treatment at 500°C in the air is used as the gas reactant of the gas sensor, and a detection electrode 13 consisting of a pair of platinum is formed on the ZnO thin film 12.


Inventors:
MIWA YUKO
SHIBATA TSUTOMU
YAMAMOTO MICHIRO
Application Number:
JP6647399A
Publication Date:
September 22, 2000
Filing Date:
March 12, 1999
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
RICOH ELEMEX CORP
International Classes:
G01N27/12; (IPC1-7): G01N27/12
Attorney, Agent or Firm:
Shunsuke Nakao