GATE DRIVER OF SEMICONDUCTOR SWITCHING DEVICE

Japanese Patent JP3281775

B2

PROBLEM TO BE SOLVED: To realize a gate driver which has excellent noise-resistant properties.
SOLUTION: A switching circuit 6 connected to a main circuit inverter controller and a gate circuit 5 to which a reverse bias inverter 7 and a forward bias inverter 8 are connected are connected between the gate and cathode of a semiconductor switching device (GTO) 3. The gate circuit 5 has a pulse transformer 10 and a diode pair 12a by which a voltage pulse supplied from the switching circuit 6 are converted into a turning-on/turning-off voltage pulse and supplied to the gate and cathode of the GTO 3, a transformer 13 and a rectifier 14 by which an AC voltage supplied from the reverse bias inverter 7 is converted into a reverse bias DC voltage and supplied to both the ends of the diode pair 12a and a transformer 17 and a rectifier 18 by which an AC current supplied from the forward bias inverter 8 is converted into a forward bias DC current and supplied to the gate and cathode of the GTO 3. With this constitution, the gate circuit 5 which is provided in the peripheral part of the GTO 3 is composed of components such as transformers and diodes which are resistant against noises, so that the gate driver of the GTO which has excellent noise-resistant properties can be realized.

Osamu Kawabata
Naonobu Shinoda

JP30107495A

May 13, 2002

November 20, 1995

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MITSUBISHI HEAVY INDUSTRIES,LTD.

H02M1/06; H02M1/08; H02M7/06; H02M7/515; H03K17/725; (IPC1-7): H02M1/08; H02M1/06; H02M7/06; H02M7/515; H03K17/725

JP609360A
JP59158127A
JP56133285U
JP580182U

Arata Ishikawa

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