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Patent Searching and Data


Title:
ゲルマニウム含有フィルムの堆積のための二ハロゲン化ゲルマニウム(II)先駆物質
Document Type and Number:
Japanese Patent JP2013503849
Kind Code:
A
Abstract:
Disclosed are GeX2Ln molecules, with X being a halide, L being an adduct other than C4H8O2, and 0.5≰n≰2. These molecules have lower melting points and/or increased volatility compared to GeCl2-dioxane. Also disclosed is the use of such molecules for deposition of thin films, such as chalcogenide, SiGe, and GeO2 films.

Inventors:
Gatineau, Julian
Zaunel, Andreas
Ishii Hana
Application Number:
JP2012527441A
Publication Date:
February 04, 2013
Filing Date:
September 02, 2010
Export Citation:
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Assignee:
Rail Liquide-Societe Anonym Pools Retude e Rex Prosatation de Procede Georges Claude
International Classes:
C07D213/06; C07D211/06; C07D317/12; C07F7/30
Attorney, Agent or Firm:
Kurata Masatoshi
Takakura Shigeo
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Kocho Chojiro
Naoki Kono
Katsu Sunagawa
Morisezo Iseki
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Takenori Masanori