Title:
GERMANIUM ADDITIONAL SOURCE FOR COMPOUND SEMICONDUCTOR, METHOD OF MANUFACTURING COMPOUND SEMICONDUCTOR USING THE SAME, AND COMPOUND SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP2006093681
Kind Code:
A
Abstract:
To provide an additional source of germanium with high safety when manufacturing a Ge-doped compound semiconductor.
When the Ge-doped compound semiconductor such as a Ge-doped GAN layer 4 is formed on an AIN high-temperature buffer layer 2 and an undoped GAN base layer 3 which are stacked on a sapphire substrate 1, an organic germanium compound is used as an impurity source which contains at least one selected from a group composed of tetramethylgermanium and tetraethylgermanium as the additional source of germanium.
Inventors:
OKUYAMA MINEO
TOMOSAWA HIDEKI
TOMOSAWA HIDEKI
Application Number:
JP2005242611A
Publication Date:
April 06, 2006
Filing Date:
August 24, 2005
Export Citation:
Assignee:
SHOWA DENKO KK
International Classes:
H01L21/205; H01L33/06; H01L33/12; H01L33/32
Domestic Patent References:
| JP2002368265A | 2002-12-20 | |||
| JPH08139361A | 1996-05-31 | |||
| JP2000269548A | 2000-09-29 |
Attorney, Agent or Firm:
Atsushi Aoki
Takashi Ishida
Tetsuji Koga
Yoshihiro Kobayashi
Masaya Nishiyama
Takashi Ishida
Tetsuji Koga
Yoshihiro Kobayashi
Masaya Nishiyama