Title:
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR LIGHT EMITTING ELEMENT
Document Type and Number:
Japanese Patent JP2006093683
Kind Code:
A
Abstract:
To enhance performance of a semiconductor element by improving flatness of each semiconductor layer crystal-growing on a GaN substrate in a dimension equivalent of a target semiconductor element.
There are provided: a GaN substrate 11 having a surface orientation defined by an absolute value of an off-angle of the surface from {0001} plane towards <1-100> direction lying in a range of 0.14 degree to 0.35 degree and by an absolute value of an off-angle of the surface from {0001} plane towards <11-20> direction lying in a range of 0.00 degree to 0.06 degree, a nitride III-V compound semiconductor layer 12 laminated on the GaN substrate 11; and an element structure part 13-20 on the nitride III-V compound semiconductor layer 12.
Inventors:
TACHIBANA KOICHI
HONGO CHIE
NUNOGAMI SHINYA
ONOMURA MASAAKI
HONGO CHIE
NUNOGAMI SHINYA
ONOMURA MASAAKI
Application Number:
JP2005243330A
Publication Date:
April 06, 2006
Filing Date:
August 24, 2005
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L29/201; H01L21/205; H01L21/331; H01L21/338; H01L29/04; H01L29/737; H01L29/778; H01L29/812; H01L33/16; H01L33/32; H01S5/323
Domestic Patent References:
| JP2006066869A | 2006-03-09 | |||
| JP2000223743A | 2000-08-11 |
Attorney, Agent or Firm:
Hidekazu Miyoshi
Iwa Saki Kokuni
Kawamata Sumio
Nakamura Tomoyuki
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu
Iwa Saki Kokuni
Kawamata Sumio
Nakamura Tomoyuki
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu