To solve the problem that because cerium oxide abrasive gains achieve low grinding speed in grinding a silicon nitride film, silicon oxide abrasive grains are often used to achieve the same grinding speed in grinding the silicon nitride film and a silicon dioxide film and when the cerium oxide abrasive gains used for grinding the silicon dioxide film remain on a surface to be ground, the cerium oxide abrasive grains aggregate together with the silicon oxide abrasive grains to form coarse particles which damage the surface to be ground or destabilize the grinding speed.

A grinding material is used for chemically and mechanically grinding a surface to be ground in manufacturing a semiconductor integrated circuit. The grinding material contains cerium oxide abrasive grains, an acid with a molecular weight of 600 or less, and water, and shows pH of 2 or higher and less than 4.

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