ＩＩＩ族窒化物半導体素子とその製造方法および半導体ウエハの製造方法およびテンプレート基板の製造方法

Japanese Patent JP7202604

B2

To provide a group III nitride semiconductor element capable of forming a group III nitride semiconductor on a Si substrate, having an excellent crystalline, a manufacturing method of them, and a manufacturing method of a semiconductor wafer, and a manufacturing method of a template substrate.SOLUTION: A manufacturing method includes: a substrate nitrogen processing step of forming an N layer by performing a nitrogen processing of a front face of a Si (111) substrate; a first step of forming an AL layer onto the N layer; and a second step of forming the N layer onto the Al layer. The manufacturing method repeats the first and second steps. The substrate nitrogen processing step supplies a nitrogen gas to the Si (111) substrate after the nitrogen gas is passed to a plasma generation region. The first step supplies an Al containing gas to the Si (111) substrate without passing the Al containing gas containing an Al atom to the plasma generation region. The second step supplies the nitrogen gas to the Si (111) substrate after the nitrogen gas is passed to the plasma generation region.SELECTED DRAWING: Figure 7

JPS62195122	PLASMA PROCESSING APPARATUS WITH MAGNIFIED MAGNETIC FIELD
JPH04192347	MICROWAVE PLASMA TREATMENT
JP2883157	[Title of Invention] Vertical heat treatment apparatus for substrates

Hori Masaru
Oda Osamu

JP2018199575A

January 12, 2023

October 23, 2018

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Tokai National University Organization

H01L21/205; C23C16/34; C23C16/455; C30B25/18; C30B29/38; H01L21/336; H01L29/78; H01L33/32

JP2013521632A
JP2012517711A
JP2014229801A
JP2003128500A
JP2017108126A
JP2014072428A
JP2010192197A

Patent Attorney Corporation Aichi International Patent Office
Fujitani Osamu
Akinori Isshiki
Tomohiro Kakutani

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