HANDOTAISOCHI NARABINI SONOSEIHO

Title:

HANDOTAISOCHI NARABINI SONOSEIHO

Document Type and Number:

Japanese Patent JPS513181

Kind Code:

A

Abstract:

A minority carrier isolation barrier in a body of semiconductor material is formed by the migration of a suitable metal-rich liquid zone of an impurity material through the semiconductor body. A thermal gradient zone melting process is practiced to produce a region of recrystallized semiconductor material of the body having solid solubility of an impurity therein to impart a level of minority carrier lifetime thereto which is different from that level of minority carrier lifetime of the body.

Inventors:

HAABEI ERISU KURAIN
TOOMASU RICHAADO ANSONII
RICHAADO ANSONII KOKOSA
ERUDAN DEYUAN UOORII

Application Number:

JP6259375A

Publication Date:

January 12, 1976

Filing Date:

May 27, 1975

Export Citation:

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Assignee:

GEN ELECTRIC

International Classes:

H01L21/761; H01L21/00; H01L21/18; H01L21/76; H01L27/08; H01L29/00; (IPC1-7): H01L21/76; H01L27/04

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