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Title:
HEAT TREATING SYSTEM
Document Type and Number:
Japanese Patent JP2002176001
Kind Code:
A
Abstract:

To provide an activation of an impurity element added to semiconductor film by a heat treatment in a short time without deforming a substrate in a manufacturing process of a semiconductor device using a substrate having a low heat resistance such as a glass or the like, a method for gettering the semiconductor film and a heat treating system capable of such heat treating.

The heat treating system capable of performing such heat treating method comprises a treating chamber formed of a quartz, an exhaust means for pressure reducing in the chamber, a means for supplying a refrigerant to the chamber, a means for exhausting the refrigerant in the chamber, a light source for heating the semiconductor film formed on the substrate in the chamber, and a means for flashing the light source in a pulse-like state.


Inventors:
YAMAZAKI SHUNPEI
ORIKI KOJI
Application Number:
JP2000370783A
Publication Date:
June 21, 2002
Filing Date:
December 05, 2000
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
H05B3/00; H01L21/20; H01L21/26; H01L21/336; H01L29/786; (IPC1-7): H01L21/26; H01L21/20; H01L21/336; H01L29/786; H05B3/00
Domestic Patent References:
JPH0951100A1997-02-18
JPH08330602A1996-12-13
JPH1197706A1999-04-09
JPH0851076A1996-02-20
JP2000260710A2000-09-22
JPS63200526A1988-08-18
JPH06268242A1994-09-22
JPH07169974A1995-07-04
JPH1070077A1998-03-10
JPH0951100A1997-02-18
JPH0729839A1995-01-31
JPS6229131A1987-02-07
JPH1070077A1998-03-10
JPH08264472A1996-10-11
JPS5938584A1984-03-02
JPH05198507A1993-08-06
Foreign References:
WO2000031777A12000-06-02
WO2000031777A12000-06-02



 
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