Title:
HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD
Document Type and Number:
Japanese Patent JP2015067878
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To deposit an excellent thin film with uniform thickness in the plane of a substrate when heating the substrate mounted on a mounting stand through induction heating of the mounting stand and when performing deposition processing for the thin film by supplying a film deposition gas to the substrate.SOLUTION: When deposition processing of a thin film is performed by heating a wafer W on a susceptor 1 through induction heating of the susceptor 1, a heat generation regulation part 1c in which induction current is generated is annularly formed in an outer side of an inner portion 1d so as to extend along an outer peripheral edge of the wafer W mounted on the inner portion 1d. In addition, the thickness dimension H of the heat generation regulation part 1c is set twice or less the skin depth δ to form on the wafer W a ridge-shaped temperature distribution in which the temperature at the central part of the wafer W is higher than that at the peripheral part thereof.
Inventors:
YONENAGA TOMIHIRO
KIM CHEOLJUNG
KONO YUMIKO
KIM CHEOLJUNG
KONO YUMIKO
Application Number:
JP2013204023A
Publication Date:
April 13, 2015
Filing Date:
September 30, 2013
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
C23C16/46; H01L21/31; H01L21/683; H05B6/06
Domestic Patent References:
| JP2012209471A | 2012-10-25 | |||
| JP2011054322A | 2011-03-17 | |||
| JP2011054318A | 2011-03-17 |
Attorney, Agent or Firm:
Toshio Inoue