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Patent Searching and Data


Title:
HIGH CAPACITANCE DAMASK CAPACITOR
Document Type and Number:
Japanese Patent JP2002118173
Kind Code:
A
Abstract:

To overcome the problem of a prior art such that a small area high capacitance structure is required for an integrated circuit employing a copper interconnection.

The capacitor comprises a first conductive layer having an upper surface, a second conductive layer having a bottom surface, and a dielectric layer abutting on the upper surface of a first metal layer and the bottom face of a second metal layer. The first conductive layer is composed of copper, the second conductive layer is composed of a material selected from a group of aluminum, aluminum oxide, tantalum nitride, titanium nitride, tungsten, tungsten nitride, silicon carbide, and their alloys, and the dielectric layer is composed of silicon nitride.


Inventors:
SARAN MUKUL
Application Number:
JP2001249410A
Publication Date:
April 19, 2002
Filing Date:
August 20, 2001
Export Citation:
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Assignee:
TEXAS INSTRUMENTS INC
International Classes:
H01L21/02; H01L21/768; H01L21/822; H01L27/04; (IPC1-7): H01L21/822; H01L21/768; H01L27/04
Attorney, Agent or Firm:
Akira Asamura (3 outside)