Title:
SEMICONDUCTOR DEVICE AND ITS FABRICATING METHOD
Document Type and Number:
Japanese Patent JP2002118175
Kind Code:
A
Abstract:
To fabricate a MISFET having a low threshold voltage by employing materials having optimal work functions in the metal gate electrode of a p-type MISFET and an n-type MISFET.
The gate electrode of an N type MIS transistor has a first metal film 616 touching a gate insulation film 615 and having a work function f in the range of Vth+3.9≤f≤Vth+4.1, where Vth is a threshold voltage. The gate electrode of a P type MIS transistor has a second metal film 617 touching the gate insulation film 615 and having a work function f in the range of 5.1+Vth≤f≤5.3+Vth, where Vth is the threshold voltage.
Inventors:
AKASAKA YASUSHI
Application Number:
JP2000306457A
Publication Date:
April 19, 2002
Filing Date:
October 05, 2000
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L21/28; H01L21/8238; H01L27/092; H01L29/423; H01L29/43; H01L29/49; (IPC1-7): H01L21/8238; H01L21/28; H01L27/092; H01L29/43
Attorney, Agent or Firm:
Takehiko Suzue (6 outside)
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