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Title:
HIGH ELECTRON MOBILITY TRANSISTOR(HEMT)
Document Type and Number:
Japanese Patent JP2012156538
Kind Code:
A
Abstract:

To improve high frequency characteristics.

A group III nitride-based high electron mobility transistor (HEMT) 20 includes a GaN buffer layer 26, and an AlyGa1-yN(y=1 or ≒1) layer 28 exists on the GaN buffer layer 26. An AlxGa1-xN(0≤x≤0.5) barrier layer 30 exists on the AlyGa1-yN layer 28 on the reverse side of the GaN buffer layer 26, and the Al concentration of the layer 28 is higher than that of the barrier layer 30. A 2DEG 38 is formed on the interface of the GaN buffer layer 26 and the AlyGa1-yN layer 28. On the barrier layer 30, source, drain and gate contacts 32, 34, 36 are formed. On the reverse side of the AlyGa1-yN layer 28, a nucleation layer 24 may be included between the GaN buffer layer 26 and the substrate 22, including a substrate 22 contiguous to the buffer layer 26.


Inventors:
WLADYSLAW WALUKIEWICZ
PRASHANT CHAVARKAR
WU YIFENG
IOULIA P SMORCHKOVA
STACIA KELLER
UMESH MISHRA
Application Number:
JP2012081708A
Publication Date:
August 16, 2012
Filing Date:
March 30, 2012
Export Citation:
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Assignee:
CREE INC
UNIV CALIFORNIA
International Classes:
H01L21/338; H01L29/812; H01L29/778; H01L29/20
Domestic Patent References:
JPH11261051A1999-09-24
JP2001085670A2001-03-30
JP2000068498A2000-03-03
JP2000223697A2000-08-11
JP2002076024A2002-03-15
Attorney, Agent or Firm:
Longhua International Patent Service Corporation



 
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