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Title:
HIGH-FREQUENCY AMPLIFIER CIRCUIT
Document Type and Number:
Japanese Patent JP2020129721
Kind Code:
A
Abstract:
To achieve an excellent performance of IIP3.SOLUTION: A high-frequency amplifier circuit comprises: an amplifier circuit having a first transistor, an inductor and a second transistor; and a distortion compensation circuit having a third transistor, a fourth transistor and a first capacitor. The first transistor is applied with an input signal. The inductor is connected to a source of the first transistor and grounded. The second transistor has a source connected to a drain of the first transistor, a gate that is grounded, and a drain connected to a power supply voltage terminal, and outputs an amplified signal. The third transistor has a drain and a gate that are connected to each other, and is connected to the power supply voltage terminal at its drain side. The fourth transistor has a drain and a gate that are connected to a source of the third transistor, and is grounded at its source side. The first capacitor connects between a node of the drain of the first transistor and the source of the third transistor.SELECTED DRAWING: Figure 1

Inventors:
SESHIMO TOSHIKI
KURIYAMA YASUHIKO
Application Number:
JP2019020723A
Publication Date:
August 27, 2020
Filing Date:
February 07, 2019
Export Citation:
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Assignee:
TOSHIBA CORP
TOSHIBA ELECTRONIC DEVICES & STORAGE CORP
International Classes:
H03F1/32; H03F1/22; H03F3/195
Domestic Patent References:
JP2014225893A2014-12-04
JP2000261255A2000-09-22
JP2008228149A2008-09-25
JPH11355055A1999-12-24
JP2008103889A2008-05-01
JP2004254095A2004-09-09
JP2012015860A2012-01-19
Foreign References:
WO2018179087A12018-10-04
US20110018636A12011-01-27
Attorney, Agent or Firm:
Hiroyuki Nagai
Yukitaka Nakamura
Satoru Asakura
Takeshi Sekine
Akaoka Akira
Nobuto Ishihara



 
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