To provide a high frequency glow surface analyzing device which execute analysis in any position with a high reproducibility without working a semiconductor wafer into a sample piece.

Either or both of the semiconductor front and rear surface except the sputtering position of a semiconductor wafer 9 is/are furnished with cover conductors 10 and 11 to keep the same potential as one of the high frequency voltage impression electrodes. The high frequency voltage impression electrodes are an anode 6 and cathode 13 when DC voltage is impressed, and the anode 6 is kept at the same potential as Faraday cage while the cathode 13 and cove conductors 10 and 11 are connected to a high frequency voltage source 14. The inert gas used should preferably be argon.