Title:
HIGH-FREQUENCY SEMICONDUCTOR INTEGRATED CIRCUIT
Document Type and Number:
Japanese Patent JP2006278720
Kind Code:
A
Abstract:
To provide a high-frequency semiconductor integrated circuit which is kept high in high-frequency isolation characteristics and capable of restraining unnecessary connections from being made through an epitaxial layer where vias or pads are formed, even when the pads or through vias are provided on a silicon substrate where the epitaxial layer of low resistivity has been formed.
The high-frequency semiconductor integrated circuit includes the silicon substrate 1, the epitaxial layer 2 formed on the silicon substrate 1, an oxide film 3 formed on the epitaxial layer 2, the pad 4 formed on the oxide film 3, and a trench 5 which is arranged so as to surround the pad 4 and isolates the epitaxial layer 2 located outside and inside its surrounds.
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Inventors:
NAKAJIMA KENSUKE
SUEMATSU KENJI
TSUTSUMI TSUNEJI
NISHINO TAMOTSU
YOSHIDA YUKIHISA
SUEMATSU KENJI
TSUTSUMI TSUNEJI
NISHINO TAMOTSU
YOSHIDA YUKIHISA
Application Number:
JP2005095496A
Publication Date:
October 12, 2006
Filing Date:
March 29, 2005
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L27/04; H01L21/822
Domestic Patent References:
| JPH07142538A | 1995-06-02 | |||
| JPH0298167A | 1990-04-10 | |||
| JPS63181373A | 1988-07-26 | |||
| JPS63213956A | 1988-09-06 | |||
| JPH10261670A | 1998-09-29 |
Attorney, Agent or Firm:
Hiroaki Tazawa
Konobu Kato
Hideaki Tazawa
Hamada Hatsune
Konobu Kato
Hideaki Tazawa
Hamada Hatsune
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