HIGH-FREQUENCY SEMICONDUCTOR MODULE

Title:

HIGH-FREQUENCY SEMICONDUCTOR MODULE

Document Type and Number:

Japanese Patent JP2016162789

Kind Code:

A

Abstract:

PROBLEM TO BE SOLVED: To provide a high-frequency semiconductor module capable of suppressing mismatching in connection between an electromagnetic coupling part and an external circuit.SOLUTION: A high-frequency semiconductor module according to an embodiment comprises a thermal insulation container that accommodates a cooling body and a high-frequency semiconductor device therein and that has an opening at a portion thereof. The high-frequency semiconductor device comprises: a signal processing circuit provided on a base plate on the cooling body; an electromagnetic coupling part electrically connected with the signal processing circuit, and that electrically connects between the interior and the exterior of the thermal insulation container by electromagnetic coupling, and that hermetically seals the interior of the thermal insulation container; a height adjustment circuit arranged so as to be separated from a side wall of the opening, in the opening of the thermal insulation container; an external circuit arranged on an outer peripheral surface of the thermal insulation container; a connection substrate arranged between the height adjustment circuit and the external circuit so as to be contacted with these circuits; and a signal lead wire and a grounding lead wire arranged on the connection substrate in parallel to each other, and that connects between the height adjustment circuit and the external circuit.SELECTED DRAWING: Figure 1

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Inventors:

TAKAGI KAZUTAKA

Application Number:

JP2015037580A

Publication Date:

September 05, 2016

Filing Date:

February 27, 2015

Export Citation:

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Assignee:

TOSHIBA CORP

International Classes:

H01L23/12; H01L23/42; H01L25/04; H01L25/18; H03F1/26

Attorney, Agent or Firm:

Amagi International Patent Office

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