To enhance the sensitivity of a force detecting sensor in which an element such as diode, transistor, etc., is formed in a mesa step formed on the surface of a semiconductor block.
A current path 38 having a piezo resistance is provided on the side of the mesa steps 30, 34, and thereby the coefficient of piezo resistance π11, the value of which is great, can be utilized. In addition, a plane of pn junction is formed, and a diode or a transistor is formed. A force transmitting block with a large area 22 and the mesa step with a small cross-sectional area 30, 32, 34, 36 are utilized, and thereby the force is amplified, and in addition, a sensitively changing phenomenon of the piezo resistance and the semiconductor property act synergistically with each other, and the sensitivity can be improved furthermore.
TSUKADA ATSUSHI
FUJITSUKA TOKUO
OMURA YOSHITERU
TADANO HIROSHI
