Title:
HIGH-TEMPERATURE ELECTRODE AND BARRIER STRUCTURE USED FOR FRAM AND DRAM
Document Type and Number:
Japanese Patent JP2002198324
Kind Code:
A
Abstract:
To provide a semiconductor structure capable of enduring an annealing at a high temperature without damaging conductivity and perfection.
The semiconductor structure includes a substrate selected among substrates of a group of silicon, polysilicon, silicon dioxide, and silicon germanium, and an electrode located on the substrate. The electrode contains a layer of a composition of Ir-M-O. Where, M is a metal selected from among metals of a group of Ta, Ti, Nb, Al, Hf, Zr, and V. The semiconductor structure is constructed and arranged so as to endure the annealing at a temperature of 600°C or more without damaging conductivity and perfection.
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Inventors:
ZHANG FENGYAN
SHIEN TEN SUU
HON IN
SHIEN TEN SUU
HON IN
Application Number:
JP2001339963A
Publication Date:
July 12, 2002
Filing Date:
November 05, 2001
Export Citation:
Assignee:
SHARP KK
International Classes:
H01L21/28; H01L21/02; H01L21/283; H01L21/3205; H01L21/8242; H01L21/8246; H01L27/10; H01L27/105; H01L27/108; H01L29/49; (IPC1-7): H01L21/28; H01L21/8242; H01L27/105; H01L27/108
Domestic Patent References:
JP2000260958A | 2000-09-22 | |||
JP2000223666A | 2000-08-11 |
Attorney, Agent or Firm:
Shusaku Yamamoto
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