Title:
有機ケイ酸塩誘電体の層を有する半導体ウエハからフォトレジストを剥離する方法
Document Type and Number:
Japanese Patent JP5183850
Kind Code:
B2
Abstract:
Method for stripping photoresist from a semiconductor wafer including a layer of organosilicate dielectric. The method introduces a flow of hydrogen-containing gas to the wafer, and uses the hydrogen-containing gas to form a plasma in proximity with at least a portion of the wafer. The plasma is used to strip at least a portion of the photoresist from the wafer. Where the stripping of the photoresist from the semiconductor wafer is performed subsequent to an etching step performed on the wafer in an etch apparatus, the present invention in turn enables the stripping of the photoresist in situ within the etch apparatus. A surprising result of the present invention is that dramatically elevated concentrations of hydrogen gas not only enable high throughput strip rates, but that the utilization of these highly concentrated hydrogen gas mixtures can be performed in safety.
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Inventors:
チェン・ティン
フランナー・ジャネット・エム.
モレイ・イアン
フランナー・ジャネット・エム.
モレイ・イアン
Application Number:
JP2002507412A
Publication Date:
April 17, 2013
Filing Date:
June 13, 2001
Export Citation:
Assignee:
LAM RESEARCH CORPORATION
International Classes:
H01L21/3065; G03F7/42; H01L21/027; H01L21/311
Domestic Patent References:
| JP2002525840A | ||||
| JP11251294A | ||||
| JP2000150463A | ||||
| JP2000164569A | ||||
| JP2002524855A | ||||
| JP2001110775A | ||||
| JP4120729A | ||||
| JP10144633A | ||||
| JP11145241A | ||||
| JP11150101A | ||||
| JP2000106358A |
Foreign References:
| WO2000010199A1 |
Attorney, Agent or Firm:
特許業務法人明成国際特許事務所