Title:
ETCHED SPUTTERING TARGET AND PROCESS
Document Type and Number:
Japanese Patent JPH07118842
Kind Code:
A
Abstract:
PURPOSE: To provide a sputtering process giving a uniform thin film without restricting a sputtering device and without requiring a test wafer and analyzing time.
CONSTITUTION: A sputtering target 20 having plastically deformed grains 22 is etched with a wet chemical etchant to remove at least a portion of the plastically deformed grains 22 from the surface of the target 20. After etching, the target 20 is mounted in a sputtering zone, and material is sputtered from the target 20 onto a substrate.
Inventors:
DONARUDO EMU MINTSU
Application Number:
JP16387194A
Publication Date:
May 09, 1995
Filing Date:
July 15, 1994
Export Citation:
Assignee:
APPLIED MATERIALS INC
International Classes:
C23C14/34; C23F1/20; C23F1/26; C25F3/04; C25F3/08; H01L21/203; H01L21/306; (IPC1-7): C23C14/34; H01L21/203; H01L21/306
Attorney, Agent or Firm:
Yoshiki Hasegawa (4 outside)