PURPOSE: To provide a stencil mask with high productivity by using a screen of a first material and a mask pattern of a second material attached to the screen.

CONSTITUTION: A stencil mask for projection ion-beam exposure includes a mesh screen 12 with a mask pattern 13. The screen has a line width of 0.1 micron and a line pitch of 0.3 to 0.5 micron, and it is made by photoetching of a material about 0.1 micron in thickness. The material may be insulator, such as silicon oxide, silicon nitride, diamond or alumina; or semiconductor or metal, such as silicon, titanium, nickel, tantalum, tungsten, or molybdenum. The mask pattern 13 has a minimum line width of 0.3 micron, and it is made by photoetching of such a material, 0.3 to 1 micron in thickness, as silicon, titanium, nickel, tantalum, tungsten, or molybdenum. The screen is fit inside a frame 11 made of silicon, Pyrex, or quartz glass.