PURPOSE: To produce a high quality silicon carbide formed body having 100-5,000μm thickness and free from cracks in the material structure in a high product yield.

CONSTITUTION: An SiC is formed on the surface of a carbonaceous substrate by CVD method by which a halogenated organosilicon compd. is reduced and thermally decomposed at a high temp. and the substrate is removed to obtain the objective silicon carbide formed body. In this method, the substrate is made of a carbonaceous material having 2.0×10-6-3.0×10-6/°C coefft. of thermal expansion and a smooth surface. A glassy carbon material having a mirror- polished surface or an expanded graphite sheet is used as the carbonaceous material.