Title:
【発明の名称】酸化物結晶薄膜の製造方法及び薄膜素子
Document Type and Number:
Japanese Patent JP3095944
Kind Code:
B2
Abstract:
PURPOSE:To provide a method for producing an oxide crystal thin film having excellent ferroelectricity by which a buffer layer for preparing a c-axis oriented Bi4Ti3O12 thin film is formed on a silicon substrate with good reproducibility and produce a thin-film element. CONSTITUTION:This method for producing an oxide crystal thin film comprises forming a buffer layer 3 comprising a bismuth silicate thin film on a silicon substrate 2, then forming an oxide ferroelectric thin film Bi4Ti3O12 4 on the buffer layer. Thereby, the c-axis oriented film of the Bi4Ti3O12 can be formed with good reproducibility and a device utilizing an extremely small coercive electric field in the c-axis direction and great spontaneous polarization can be developed.
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Inventors:
Hironori Matsunaga
Masayoshi Kiba
Masayoshi Kiba
Application Number:
JP13913194A
Publication Date:
October 10, 2000
Filing Date:
June 21, 1994
Export Citation:
Assignee:
Sharp Corporation
International Classes:
C30B29/22; C23C16/40; H01L21/336; H01L21/8242; H01L21/8246; H01L21/8247; H01L27/10; H01L27/105; H01L27/108; H01L29/788; H01L29/792; H01L37/02; H01L41/08; H01L41/22; (IPC1-7): C30B29/22; C23C16/40; H01L21/8242; H01L21/8247; H01L27/10; H01L27/108; H01L29/788; H01L29/792; H01L37/02; H01L41/08; H01L41/22
Domestic Patent References:
| JP8340085A | ||||
| JP8340086A |
Other References:
Ｎａｋａｍｕｒａ Ｔ．ｅｔ ａｌ．，”Ｐｒｅｐａｒａｔｉｏｎ ｏｆ Ｃ−ａｘｉｓ ｏｒｉｅｎｔｅｄ Ｂｉ４Ｔｉ３０１２ ｔｈｉｎ ｆｉｌｍｓ ｂｙ ｍｅｔａｌｏｇａｒｎｉｃ ｃｈｅｍｉｃａｌ ｖａｐｏｒ ｄｅｐｏｓｉｔｉｏｎ”，Ｊａｐａｎｅｓｅ Ｊｏｕｒｎａｌ ｏｆ Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ，Ｐａｒｔ １，Ｖｏｌ．３２，Ｎｏ．９Ｂ，１９９３，ｐｐ．４０８６−４０８８
Attorney, Agent or Firm:
Yoshio Kawaguchi (1 person outside)