Title:
II-VI COMPOUND SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3461611
Kind Code:
B2
Abstract:
PURPOSE: To obtain a blue light emitting element with a low operating voltage by providing an admixture element layer consisting of Cd or Te and an electrode layer containing an admixture element and a metal for forming eutectic alloy on ZnMgSSe semiconductor layer.
CONSTITUTION: A middle layer 15 consisting of Cd or Te is inserted between upper and lower electrode layers 16 and 18 consisting of metal for forming eutectic alloy at an area to Cd or Te. By performing annealing in the case of the reaction or heat treatment of the formation process of the electrode layers 16 and 8 and the middle layer 15, Cd or Te is diffused into ZnXMg1-XSYSe1-Y (0≤X≤1, 0≤Y≤1) semiconductor layer 7 and a compound between the ZnXMg1-XSYSe1-Y (0≤X≤1, 0≤Y≤1) semiconductor and Cd or Te can be formed, thus obtaining a blue light emitting element with a lower operating voltage than an element using a conventional electrode structure.
Inventors:
Masaki Murakami
Yasuo Koide
Nobuaki Teraguchi
Yasuo Koide
Nobuaki Teraguchi
Application Number:
JP6637395A
Publication Date:
October 27, 2003
Filing Date:
March 24, 1995
Export Citation:
Assignee:
Masaki Murakami
Yasuo Koide
Sharp Corporation
Yasuo Koide
Sharp Corporation
International Classes:
H01L21/203; H01L21/363; H01L29/43; H01L29/45; H01L33/06; H01L33/14; H01L33/28; H01L21/28; H01L33/30; H01L33/40; H01S5/00; H01S5/042; H01S5/327; (IPC1-7): H01S5/327; H01L21/203; H01L21/28; H01L21/363; H01L29/43; H01L33/00; H01S5/042
Domestic Patent References:
| JP745911A | ||||
| JP6181339A | ||||
| JP5259509A | ||||
| JP457371A | ||||
| JP6188524A | ||||
| JP758417A | ||||
| JP2122565A | ||||
| JP529654A |
Other References:
【文献】米国特許3780427(US,A)
Attorney, Agent or Firm:
Shintaro Nogawa