Title:
In ALLOY SPUTTERING TARGET AND METHOD FOR PRODUCING In ALLOY SPUTTERING TARGET
Document Type and Number:
Japanese Patent JP2019056161
Kind Code:
A
Abstract:
To provide an In alloy sputtering target that can stably form a thin film composed of In alloy containing at least one or both of Cu or Ga and In, and a method for producing an In alloy sputtering target that can stably form the In alloy sputtering target.SOLUTION: An In alloy sputtering target comprises a spray coating material of a composition containing at least one or both of Cu or Ga and In, where a ratio of an In simple substance phase is 1% or less, and a theoretical density ratio is 92% or more.SELECTED DRAWING: None
Inventors:
UMEMOTO KEITA
HASHIMOTO SHU
HASHIMOTO SHU
Application Number:
JP2017182336A
Publication Date:
April 11, 2019
Filing Date:
September 22, 2017
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP
International Classes:
C23C14/34; B22F1/00; B22F3/14; C23C4/08
Attorney, Agent or Firm:
Yasushi Matsunuma
Mitsuo Teramoto
Fumihiro Hosokawa
Kazunori Onami
Mitsuo Teramoto
Fumihiro Hosokawa
Kazunori Onami