Title:
INDIUM TARGET AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2013227632
Kind Code:
A
Abstract:
To provide an indium target the film deposition rate of which can be improved, and to provide a method for manufacturing the same.
A method for manufacturing an indium target includes a step of producing a rolled body of a cast ingot of an indium metal, and a step of performing the heat treatment of the rolled body in the atmosphere. The indium target which is thus manufactured has a sputtering surface whose surface roughness (Ra) after the elapse of the target life 15 hWh is ≤25 μm when the sputtering is performed under the condition of a pressure of 0.1-3 Pa, and a power density of 0.1-6 W/cm2.
Inventors:
MASUDA TADASHI
MURAKI MIKI
NAKADAI YASUO
AKAMATSU YASUHIKO
MATSUMOTO TAKESHI
OTOMO MASAHIKO
NAGASAWA SHOJI
OGINOSAWA TAKATOSHI
MURAKI MIKI
NAKADAI YASUO
AKAMATSU YASUHIKO
MATSUMOTO TAKESHI
OTOMO MASAHIKO
NAGASAWA SHOJI
OGINOSAWA TAKATOSHI
Application Number:
JP2012101682A
Publication Date:
November 07, 2013
Filing Date:
April 26, 2012
Export Citation:
Assignee:
ULVAC CORP
International Classes:
C23C14/34
Domestic Patent References:
| JP2012052194A | 2012-03-15 | |||
| JP2008127623A | 2008-06-05 | |||
| JP2001049426A | 2001-02-20 | |||
| JP2004052111A | 2004-02-19 | |||
| JP2011127160A | 2011-06-30 | |||
| JP2011236445A | 2011-11-24 |
Foreign References:
| US20050279630A1 | 2005-12-22 | |||
| US20030052000A1 | 2003-03-20 |
Attorney, Agent or Firm:
Junichi Omori
Ori Akira
Ori Akira
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