Title:
INFRARED DETECTING ELEMENT
Document Type and Number:
Japanese Patent JP3385762
Kind Code:
B2
Abstract:
PURPOSE: To provide a highly sensitive detecting element by forming a heat separating region under a membrane on a main flat face of a semiconductor after removing a part of the substrate and forming a capacitor and a thermopile which is provided with a hot contact point and on which an infrared-ray absorbing membrane is to be formed in the membrane.
CONSTITUTION: A well 14 is formed in a main face of a silicon substrate 1 and a membrane 2 is formed in the main flat face. The membrane 2 is partly separated from a substrate 1 to form a heat separating region 5, and a well 14, an oxidized film 12, and a doped silicon 13 are layered to compose a capacitor 15. Polysilicon 19 which composes a thermopile is deposited on the membrane 2, patterned, and an interlayer insulating film 8 is formed and further hot contact points 3, cold contact points 4, and leading wires 7 of an aluminum thin film are formed and mutually connected. Moreover, a protective film 9 is formed and an infrared-ray absorptive film 6 is formed on the protective film 9 on the contact point. Attributed to formation of the capacitor 5, the thermal noise at the time when thermal resistance between the hot contact points 3 is increased by a filter function can be suppressed and the sensitivity can be increased.
Inventors:
Masaki Hirota
Application Number:
JP30757594A
Publication Date:
March 10, 2003
Filing Date:
December 12, 1994
Export Citation:
Assignee:
Nissan Motor Co., Ltd
International Classes:
G01J1/02; G01J5/02; G01J5/12; G01J5/14; H01L35/32; (IPC1-7): G01J1/02; G01J5/02; H01L35/32
Domestic Patent References:
| JP6466588A | ||||
| JP5157622A | ||||
| JP3156981A | ||||
| JP6283766A | ||||
| JP4500437A |
Attorney, Agent or Firm:
Hidekazu Miyoshi (7 outside)