Title:
INFRARED DETECTOR
Document Type and Number:
Japanese Patent JPH0590647
Kind Code:
A
Abstract:
PURPOSE:To raise the temperature of an infrared detector efficiently by forming a heat insulating film consisting of a material small in heat conductivity between a semiconductor substrate and a lower electrode. CONSTITUTION:An electrode pattern 12 consisting of metal is made in the desired position of a semiconductor substrate 11. And an infrared detector comprising a lower electrode 13, a pyroelectric material 14 and a lower electrode 15 is made, and the end of the lower electrode 13 is connected to the electrode wiring pattern 12. In such structure, a heat insulating film 16 is made below the lower electrode of the infrared detector so that the temperature rise of the infrared ' detector may be performed efficiently by the heat of the infrared irradiation of the infrared detector. Hereby, the heat of by infrared irradiation ceases to escape to the semiconductor substrate below the infrared detector, so the heat conversion can be performed inside the infrared detector very efficiently.
Inventors:
SHIBAYAMA KATSUMI
TANAKA AKIMASA
TANAKA AKIMASA
Application Number:
JP25230291A
Publication Date:
April 09, 1993
Filing Date:
September 30, 1991
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK
International Classes:
G01J1/02; G01J5/12; G01J5/34; H01L27/14; H01L37/02; H04N5/33; (IPC1-7): G01J1/02; G01J5/12; H01L27/14; H01L37/02; H04N5/33
Domestic Patent References:
| JPS6355450B2 | 1988-11-02 | |||
| JPH02230769A | 1990-09-13 |
Attorney, Agent or Firm:
Yoshiki Hasegawa (3 outside)
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