Title:
INFRARED SENSOR
Document Type and Number:
Japanese Patent JPH05235415
Kind Code:
A
Abstract:
PURPOSE:To manufacture a plurality of infrared sensors at a time, to shorten a production time, to improve yield and to reduce manufacturing cost by forming each member under the state of a silicon wafer, joining each silicon wafer and cutting and dividing the whole in an infrared sensor. CONSTITUTION:A susceptor 4 is formed of a silicon material. A detecting section 7 is formed onto one-end side face 4A of the susceptor 4 through an insulating film 6. A cover body 11, one-end side face 11A of which is used as a cover body 13 and the other-end side face 11B of which is employed as a recessed section 12, is anode-joined with one-end side face 4A of the susceptor 14 through a glass layer 14. An infrared filter 15 is mounted onto the other-end side face 11B of the cover body 11. Accordingly, each member can be manufactured under the state of a silicon wafer, and productivity can be improved while an infrared sensor can also be miniaturized easily.
Inventors:
KOBAYASHI SHINJI
Application Number:
JP6948092A
Publication Date:
September 10, 1993
Filing Date:
February 19, 1992
Export Citation:
Assignee:
MURATA MANUFACTURING CO
International Classes:
H01L37/02; (IPC1-7): H01L37/02
Attorney, Agent or Firm:
Kazuhiko Hirose
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