INPUT PROTECTIVE CIRCUIT, MANUFACTURE OF SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE AND MANUFACTURE OF THE SEMICONDUCTOR DEVICE

Japanese Patent JP2000269430

A

To input a large signal potential, even without providing two power sources or voltage conversion circuits in an input protective circuit.

Input signals inputted from an input pad 11 are connected via an input signal line 14 to an input gate 13. To the input signal line 14, this input protective circuit 12 is inserted. The input protective circuit is constituted of one p-n junction diode 20, whose one end is connected to the input signal line 14, and other end is connected to a ground potential VSS. The p-n junction diode 20 is constituted of a p-type silicon substrate 21 and a heavily doped region 23, formed by heavily doping n-type impurities on the surface of the p-type silicon substrate 21. Then, in the silicon substrate 21 at the lower part of the diode 20, a void 24 is formed.

JPH07101705	INDUSTRIAL APPLICABILITY: Semiconductor integrated circuit apparatus and method for manufacturing the same.
JPS5796563	SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
JP3721124	Electronic device

USHIKU YUKIHIRO
HIEDA KATSUHIKO
NAKAJIMA KAZUAKI

JP7307399A

September 29, 2000

March 18, 1999

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TOSHIBA CORP

H01L27/04; H01L21/329; H01L21/336; H01L21/822; H01L21/8234; H01L21/8242; H01L27/088; H01L27/108; H01L27/12; H01L29/786; H01L29/861; H01L29/866; (IPC1-7): H01L27/04; H01L21/822; H01L21/8234; H01L27/088; H01L27/108; H01L21/8242; H01L27/12; H01L29/786; H01L21/336; H01L29/866; H01L21/329; H01L29/861

Takehiko Suzue (6 outside)

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