Title:
INSULATED-GATE BIPOLAR TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP3895147
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an IGBT in which its high-speed switching performance is further improved while keeping ON-resistance low.
SOLUTION: This insulated-gate bipolar transistor switches a current flowing in the thickness direction of the semiconductor substrate from a source electrode formed on the front surface side of a semiconductor substrate toward a drain electrode formed on the rear surface side of the semiconductor substrate, depending on the electric potential of a gate electrode formed on the front surface of the semiconductor substrate. On the rear surface of the semiconductor substrate, an ohmic contact and a Schottky contact are formed in parallel, wherein the ohmic contact is for guiding the current flowing in the thickness direction of the semiconductor substrate to the drain electrode, and the Schottky contact is for guiding the current flowing in the thickness direction of the semiconductor substrate to the drain electrode and for injecting minority carriers to generate conductivity modulation on the current flowing in the thickness direction of the semiconductor substrate to reduce the ON-resistance.
Inventors:
Toshiki Matsubara
Kuriyama Masahiro
Kuriyama Masahiro
Application Number:
JP2001329541A
Publication Date:
March 22, 2007
Filing Date:
October 26, 2001
Export Citation:
Assignee:
Shindengen Industry Co., Ltd.
International Classes:
H01L29/78; H01L29/739; (IPC1-7): H01L29/78
Attorney, Agent or Firm:
Seigo Matsuo