INSULATED GATE TRANSISTOR DRIVING CIRCUIT

Japanese Patent JP3373704

B2

PROBLEM TO BE SOLVED: To shorten the breaking time of a collector current so as to suppress switch losses arid surge voltages by adjusting the operating parameter of an insulated gate transistor based on the detecting output of an operating state detecting means while the collector current is broken.
SOLUTION: A gate resistance switching element 5 is conducted during the T2-T3 period. As a result, the resistance of a gate circuit becomes equal to the resistance value of a gate resistor 4b and the T2-T3 period becomes shorter as compared with the conventional IGBT driving circuit. When the time T3 comes and the collector-emitter voltage VCE becomes higher than a power supply voltage VD, a collector current IC starts to decrease. When this rate of change becomes larger, the output voltage VDIF of a differentiation circuit 6 also becomes higher. As a result, the damping time constant of a gate-collector voltage VGE becomes higher, because the output of a comparator 7 becomes level '0' and the switching element 5 is cut off, and then, gate resistors 4a and 4b are connected in series with the gate circuit.

JPH06165417	ULTRASONIC SIGNAL CONVERTER
JPH1014098	MOTOR DRIVE CONTROLLER
JPS5234320	CONSTANT OUTPUT INVERTER

Satoshi Chikai
Haruyoshi Mori
Tomohiro Kobayashi

JP21719195A

February 04, 2003

August 25, 1995

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Mitsubishi Electric Corporation

H02M7/537; H02M1/08; H03K17/04; H03K17/082; H03K17/00; (IPC1-7): H02M1/08; H02M7/537

JP5336732A
JP2266712A
JP5161343A

Shigeaki Yoshida (2 outside)

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