To provide an organic silane compound-containing insulating film material which enables an insulating film suitable for interlayer insulating material used for a semiconductor device to be formed through a chemical vapor deposition method, and to provide its manufacturing method, an insulating film formed through the above method, and a semiconductor device using the insulating film.

An insulating film is formed through a chemical vapor deposition method, especially through a plasma excitation chemical vapor deposition method using the insulating film material containing an organic silane compound provided with at least an ester group represented by formula 1. At this point, in the formula 1, R1and R2denote a 1-20 C hydrocarbon group respectively, and n is an integer of 0 to 3.

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