To provide an integrated circuit device using insulated gate type field effect transistors where signal transmission delay is remarkably reduced under the actual operation of an element.
An integrated circuit device is constituted by integrating a plurality of insulated gate type field effect transistors. Gates 14G of the insulated gate type field effect transistors and wiring layers 14L facing the gates 14G are composed of NbCN films which turned to superconducting states under cryogenic circumstance. The gates 14G and the wiring layers 14L are practically used under cryogenic circumstance lower than or equal to a super conductivity transition temperature where states of the gates 14G and the wiring layers 14L turn to superconducting states.
| WO/2023/140090 | WAVEGUIDE |
| JP5419547 | Semiconductor devices and their manufacturing methods |
| JP2010034407 | SEMICONDUCTOR INTEGRATED CIRCUIT |
KUROSAWA ITARU
TAKADA SUSUMU
MATSUMOTO SATOSHI
