To prevent deterioration in retention characteristic and film fatigue characteristic caused by oxidation of an electrode to improve reliability of a device by using an alloy in which includes more than two kinds of metals among a platinum group as the main ingredient of at least one electrode of electrodes.

First, a platinum palladium film 101 is formed on a first interlayer insulation film 102 which is formed on a semiconductor substrate. Then, after etching the platinum palladium film using a photoresist as a mask, a lower electrode is produced by removing the photoresist. Next, after forming a film having a high dielectric constant, a dielectric film 103 is formed by etching undergoing the photoresist step in the same way as the lower electrode. Moreover, after forming the platinum palladium film, an upper electrode 104 is produced by etching the platinum palladium film using the photoresist as the mask in the same way as the lower electrode. Thereafter, after a second interlayer insulation film 106 is formed, a contact hole connected to the upper electrode and Al wiring layer 105 are formed. Thus, a dielectric device having a structure of a cross section is obtained.