INTEGRATED STRUCTURE AND ITS MANUFACTURE

Japanese Patent JP3166980

B2

PURPOSE: To enable to manufacture a structure simply and economically by laminating the bipolar power transistor and the low-voltage bipolar transistor which has an emitter-switching circuit constitution or a semi-bridge circuit constitution.
CONSTITUTION: A second-conductive type first region 3, which constitutes the base of a bipolar power transistor Tp provided in first-conductive type semiconductor substrates 1 and 2, is provided. Furthermore, the emitter of the power transistor Tp provided in the first region 3 is constituted, and a first-conductive type embedded region 4 constituting the collector of a low-voltage bipolar transistor Ts is provided at the same time. In addition, a second-conductive type epitaxial layer 5, which is grown on the entire surface of the chip, is provided. A second-conductive type region 8, which is extended until the contact with the region 3 in this epitaxial layer 5 and formed, so as to surround the collector region 5 of the low voltage transistor Ts, is also provided. Thus, the power transistor Tp and the low-voltage transistor Ts can be laminated on the same semiconductor chip.

JPS5958853

SEMICONDUCTOR DEVICE

Santo Puzzolo
Raphaere Zambrano
Mario paparo

JP30482391A

May 14, 2001

November 20, 1991

Click for automatic bibliography generation  

STMicroelectronics S.r.l.
Consolzio Perla Licerca Sula Microelet Ronica Nell Mezzo di Orno

H01L21/331; H01L21/8222; H01L27/06; H01L21/8249; H01L27/082; H01L29/73; H01L29/732; (IPC1-7): H01L21/8249; H01L27/06; H01L29/73

JP2253653A
JP6392058A

Akihide Sugimura (5 outside)

Previous Patent: ランドセル

Next Patent: PASSAGE TEACHING DATA GENERATING METHOD, ROBOT CONTROL METHOD AND ROBOT SYSTEM FOR DEBURRING/POLISHI...